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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3309
DESCRIPTION With TO-220Fa package High collector breakdown voltage Excellent switching times APPLICATIONS Switching regulators and high voltage switching applications High speed DC-DC converter application
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB

PARAMETER
INC
Collector-base voltage
Collector-emitter voltage
ANG H
E SEM
Open base
OND IC
CONDITIONS
TOR UC
VALUE 500 400 7 2 4 0.5 UNIT V V V A A A
Open emitter
Emitter-base voltage
Open collector
Collector current (DC) Collector current-peak Base current Ta=25ae
2.0 W 20 150 -50~150 ae ae
PC
Collector dissipation TC=25ae
Tj Tstg
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector -base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IE=1mA; IE=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=400V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V 20 MIN 400 500
2SC3309
SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
TYP.
MAX
UNIT V V
1.0 1.5 100 1 |I
V V A mA
Switching times tr ts tf
Rise time Fall time

Storage time
INC
E SEM ANG H
IB1=-IB2=0.08A VCCO 200V;RL=250| PW=20|I s
OND IC
TOR UC
1.0 |I 2.5 1.0
8
s |I |I s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3309

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3309

CHA IN
E SEM NG
OND IC
TOR UC
4


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